Prof. Kim`s R.P.

Home > People > Professor > Prof. Kim`s R.P.

  • 166 D. Ko, J. T. Jang, S. Choi, H. Kang, J. Kim, H. R. Yu, G. Ahn, J. Lee, S.-J. Choi, D. M. Kim, and D. H. Kim* "Comparative study on the structural dependence of the sensitivity InGaZnO photosensors" The 24th Korean Conference on Semiconductors, 2017-02 PDF
  • 165 J.-Y. Kim, S. Choi, H. Kang, J. T. Jang, D. Ko, J. Rhee, Y. H. Ri, S.-J. Choi, D. M. Kim, and D. H. Kim* "Influence of the oxygen flow rate during sputter deposition on the current stress instability in bottom-gate amorphous InGaZnO Thin-Film Transistors" The 24th Korean Conference on Semiconductors, 2017-02 PDF
  • 164 S. Kim, J. T. Jang, S. Choi, J. Jang, J. Kim, H.-S. Mo, D. M. Kim, S.-J. Choi, and D. H. Kim* "Influence of oxygen-content on the characteristics in amorphous InGaZnO TFT-based Temperature Sensors" The 24th Korean Conference on Semiconductors, 2017-02 PDF
  • 163 H. Jung, S. Choi, J. T. Jang, B. Choi, J. Yoon, J. Lee, Y. Lee, D. M. Kim, S.-J. Choi, and D. H. Kim* "Universal bias stress-induced instability model in the inkjet-printed carbon nanotube network FETs" The 24th Korean Conference on Semiconductors, 2017-02 PDF
  • 162 S. Choi, J. T. Jang, H. Kang, J.-Y. Kim, D. Ko, J. Rhee, H. R. Yu, J. Park, S.-J. Choi, D. M. Kim, and D. H. Kim* "TCAD-based comparative study on the positive bias stress instability between the single-gate and double-gate structured In-Ga-Zn-O TFTs" The 24th Korean Conference on Semiconductors, 2017-02 PDF
  • 161 J. Rhee, S. Choi, H. Kang, J.-Y. Kim, J. T. Jang, D. Ko, S.-J. Choi, D. M. Kim, and D. H. Kim* "TCAD-based analysis on the relationship between the physical parameters in charge trapping and the stretched exponential model parameters in amorphous InGaZnO TFTs under the positive gate bias tempera" The 24th Korean Conference on Semiconductors, 2017-02 PDF
  • 160 H. R. Yu, J. T. Jang, S. Choi, H. Kang, D. Ko, J-.Y. Kim, G. Ahn, J. Lee, S.-J Choi, D. M. Kim, and D. H. Kim* "Influence of active layer thickness on the abnormal output characteristics in amorphous In-Ga-Zn-O TFTs under high current-flowing operation" The 24th Korean Conference on Semiconductors, 2017-02 PDF
  • 159 S. K. Kim, J. Shim, D.-M. Geum, C. Z. Kim, H.-S. Kim, Y.-S. Kim, H.-K. Kang, J. D. Song, S.-J. Choi, D. H. Kim, W. J. Choi, H.-J Kim, D. M. Kim*, S. H. Kim1* (*co-corresponding authors) "Cost-effective Fabrication of In0.53Ga0.47As-on-Insulator on Si for Monolithic 3D via Novel Epitaxial Lift-Off (ELO) and Donor Wafer Re-use" IEEE International Electron Device Meeting (IEDM), 2016-09
  • 158 M. Lim, J. Lee, D. H. Kim, D. M. Kim, S. Kim, S.-J. Choi "Comparative Study of Piezoresistance Effect of Semiconducting Carbon Nanotube-Polydimethylsiloxane Nanocomposite Strain Sensor" 16th International Conference on Nanotechnology, 2016-08 PDF
  • 157 H. Kang, J. T. Jang, S. Choi, J.-Y. Kim, D. Ko, S.-J. Choi, D. M. Kim, D. H. Kim "Wavelength-dependence of Persistent Photoconductivity in Zinc Oxynitride Thin-Film-Transistors" IMID 2016 DIGEST, 2016-08 PDF
  • 156 S. Choi, J. Kim, J. Kim, J. T. Jang, H. Kang, J.-Y. Kim, D. Ko, D. M. Kim, S.-J. Choi, J. C. Park, D. H. Kim "Temperature-dependency of the Donor Creation under Positive Gate and Drain Bias Stress in Self-Aligned Top-Gate a-InZnO TFTs" IMID 2016 DIGEST, 2016-08 PDF
  • 155 B. Choi, S. H. Jang, J. Yoon, J. Lee, M. Jeon, Y. Lee, J. Han, J. Lee, D. M. Kim, D. H. Kim, C. Lim, S. Park, S.-J. Choi "Comprehensive evaluation of early retention (fast charge loss within a few seconds) characteristics in tube-type 3-D NAND Flash Memory" Symposium on VLSI Technology Digest of Technical Papers (VLSI), 2016-06 PDF
  • 154 D. Ko, J. T. Jang, Y.-J. Baek, S.-J. Choi, D. M. Kim, C. J. Kang, T.-S. Yoon, H.-S. Mo, D. H. Kim "Effects of ambient and photo-illumination on electrical characteristics in the γ-Fe2O3 nanoparticle assembly-based memristors" The 23st Korean Conference on Semiconductors(KCS 2016), p. 237, 2016-02 PDF
  • 153 H. Kang, J. T. Jang, S. Choi, S.-J. Choi, D. M. Kim, D. H. Kim "Analysis on the Degradation Mechanism under Positive/Negative Gate Bias Stress in Zinc Oxynitride Thin-Film Transistors" The 23st Korean Conference on Semiconductors(KCS 2016), p. 70, 2016-02 PDF
  • 152 J. Lee, B. Choi, J. Yoon, M. Jeon, Y. Lee, J. Han, J. Lee, D. M. Kim, D. H. Kim, S.-J. Choi "Ink-jet printed ambipolar transistors and inverters based on semiconducting carbon nanotubes with chemical doping technique" The 23st Korean Conference on Semiconductors(KCS 2016), p. 54, 2016-02 PDF
  • 151 J. Jang, J. Kim, H.-S. Mo, J. H. Lee, B.-G. Park, S.-J. Choi, D. M. Kim, D. H. Kim, J. Park "Analysis and modeling on the pH-dependent current drift of Si nanowire ion-sensitive field effect transistor (ISFET)-based biosensors" The 23st Korean Conference on Semiconductors(KCS 2016), p. 154, 2016-02 PDF
  • 150 J. Han, B. Choi, J. Yoon, J. Lee, M. Jeon, Y. Lee, J. Lee, D. M. Kim, D. H. Kim, S.-J. Choi "A capacitorless 1T-DRAM cell on independent double-gate FinFET" The 23st Korean Conference on Semiconductors(KCS 2016), p. 238, 2016-02 PDF
  • 149 J. T. Jang, S.-J. Choi, D. M. Kim, D. H. Kim "Calculation Method for Negative Bias Illumination Stress-induced Instability in Amorphous IGZO Thin-Film Transistors" The 23st Korean Conference on Semiconductors(KCS 2016), p. 41, 2016-02 PDF
  • 148 M. Jeon, J. Yoon, J. Lee, B. Choi, J. Han, Y. Lee, J. Lee, D. M. Kim, D. H. Kim, S.-J. Choi "Hydrogen gas sensor based on carbon nanotube transistors with palladium source/drain electrodes using the pulse measurement" The 23st Korean Conference on Semiconductors(KCS 2016), p. 15, 2016-02 PDF
  • 147 S. Kim, J. Kim, H.-S. Mo, J. H. Lee, D. M. Kim, S.-J. Choi, B.-G. Park, D. H. Kim, J. Park "Sampling time and pH-dependences of SiNW ISFET-based biosensors" The 23st Korean Conference on Semiconductors(KCS 2016), p. 14, 2016-02 PDF