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  • 104 I. Hur, H. Bae, M. Bae, Y. Kim, D. Kong, H. Jeong, J. Jang, J. Kim, W. Kim, Y. H. Kim, J. Lee, S. Jun, C. H. Jo, D. M. Kim, and D. H. Kim "Characterization of Intriinsic Field Effect Mobiliity in a-IGZO Thin-Film Transistors Through the De-embedding the Parasitic Source and Drain Resistance Effects" The 19th Korean Conference on Semiconductors, 2012-02
  • 103 J. Lee, J. H. Lee, H. Jang, M. Uhm, W. H. Lee, S. Hwang, B.-G. Park, I.-Y. Chung, D. M. Kim and D. H. Kim "CMOS-Compatible Inverter-Type Si Nanoribbon Biosensor with High Sensitivity" The 19th Korean Conference on Semiconductors, 2012-02
  • 102 M. Bae, D. Yun, Y. Kim, D. Kong, H. Jeong, J. Jang, W. Kim, I. Hur, J. Kim, Y. H. Kim, J. Lee, S. Jun, C. H. Jo, D. H. Kim, and D. M. Kim "Differential Ideality Factor Technique and Extraction of Subgap Density-of-States in Amorphous InGaZnO Thin-Film Transistors" The 19th Korean Conference on Semiconductors, 2012-02
  • 101 J. S. Shin, H. Bae, E. Hong, J. Jang, D. Yun, H. Seo, H. Choi, D. H. Kim, and D. M. Kim "Separate Extraction Technique of Gate, Source, Drain, and Substrate Resistances in Individual MOSFET Combining I-V and C-V Characteristics" The 19th Korean Conference on Semiconductors, 2012-02
  • 100 J. S. Shin, H. Choi, H. Bae, J. Jang, D. Yun, E. Hong, H. Seo, D. H. Kim, and D. M. Kim "Si/SiGe Vertical Gate DHBT (VerDHBT)-based 1T DRAM Cell For Improved Retention Characteristics With a Large Hysteresis window" The 19th Korean Conference on Semiconductors, 2012-02
  • 99 J. H. Lee, J. Lee, M-C Sun, W. H. Lee, M Uhm, S. Hwang, I-Y Chung, D. M. Kim, D. H. Kim, and B-G Park "Analysis of hysteresis characteristics of fabricated SiNW biosensor in aqueous environment with reference electrode" Silicon Nanoelectronics Workshop (SNW), 2012 IEEE Digital Object Identifier, 2012-
  • 98 J.‐H. Ahn, J.‐Y. Kim, C. Jung, D.‐I. Moon, S.‐J. Choi, C.‐H. Kim, K.‐B. Lee, H. G. Park, and Y.‐K. Choi "CMOS-Based Biosensors with an Independent Double‐Gate FinFET" IEEE International Electron Device Meeting (IEDM), 2011-12
  • 97 D.‐I. Moon, J.‐S. Oh, S.‐J. Choi, S. Kim, J.‐Y. Kim, M.‐S. Kim, Y.‐S. Kim, M.‐H. Kang, J.‐W. Kim, and Y.‐K. Choi "Multi‐Functional Universal Device using a Band‐Engineered Vertical Structure" IEEE International Electron Device Meeting (IEDM), 2011-12
  • 96 M. Lim, S.‐J. Choi, K. Moon, E. Jung, M.‐L. Seol, Y. Do, Y.‐K. Choi, and H. Han "Terahertz Time Domain Spectroscopy of Vertical Silicon Nanowires" 36th International Conference on Infrared, Millimeter, and Terahertz Waves, 2011-10
  • 95 D. J. Baek, S.‐J. Choi, D.‐I. Moon, and Y.‐K. Choi "Scaling of the Pull‐In Voltage in a Novel CMOS‐compatible NEMS Switch" Solid State Devices and Materials (SSDM), 2011-09
  • 94 H. Jang, J. Lee, J. H. Lee, H. Seo, M. Uhm, W. H. Lee, D. M. Kim, I.-Y. Chung and D. H. Kim "Analytical of current hysteresis of SiNW in the aqueous solution depending on measurement biases" 2011 11th IEEE NANO, 2011-08
  • 93 S.‐J. Choi, D.‐I. Moon, J. P. Duarte, S. Kim, and Y.‐K. Choi "A Novel Junctionless All‐Around‐Gate SONOS Device with a Quantum Nanowire on a Bulk Substrate for 3D Stack NAND Flash Memory" Symposium on VLSI Technology Digest of Technical Papers (VLSI), pp. 74‐75, 2011-06
  • 92 S. Kim, S.‐J. Choi, D.‐I. Moon, and Y.‐K. Choi "Optical‐Charge Pumping: A Universal Trap Characterization Technique for Nanoscale Floating Body Devices" Symposium on VLSI Technology Digest of Technical Papers (VLSI), pp. 190‐191, 2011-06
  • 91 M. Bae, Y. Kim, W. Kim, D. Kong, H. Jung, Y. W. Jeon, S. Kim, I. Hur, J. Kim, D. M. Kim, D. H. Kim, B. D. Ahn, S. Y. Park, J.-H. Park, J. H. Kim, J. Park, and J.-H. Lee "Analytical I-V and C-V Models for Amorphous InGaZnO TFTs and their Application to Circuit Simulations" in SID'11 Dig. Tech. Papers, 2011-05
  • 90 D. Kong, H. Jung, Y. Kim, M. Bae, Y. W. Jeon, S. Kim, J. Jang, J. Kim, W. Kim, I. Hur, D. M. Kim, D. H. Kim, B. D. Ahn, S. Y. Park, J.-H. Park, J. H. Kim, J. Park, and J.-H. Lee "Density-of-States Based Analysis on the Effect of Active Thin-film Thickness on Current Stress-induced Instability in Amorphous InGaZnO AMOLED Driver TFTs" in SID'11 Dig. Tech. Papers, 2011-05
  • 89 D. Yun, J. Jang, H. Bae, J. S. Shin, J. Lee, H. Jang, E. Hong, W. H. Lee, M. Uhm, H. Seo, D. H. Kim, and D. M. Kim "A Study on the Hfin dependence of Intrinsic gate delay in FinFET" The 18th Korean Conference on Semiconductors, 2011-02
  • 88 H. Bae, J. Jang, J. S. Shin, D. Yun, J. Lee, H. Jang, E. Hong, D. H. Kim, and D. M. Kim "Modeling and Separate Extraction of Gate Bias- and Channel Length-Dependent intrinsic and Extrinsic Resistance Elements in LDD MOSFETs" The 18th Korean Conference on Semiconductors, 2011-02
  • 87 Y. Jeon, I. Hur, S. Kim, Y. Kim, M.-K. Bae, H. K. Jung, D. S. Kong, W. Kim, J. Kim, H. Jang, J. Jang, J. Lee, D. M. Kim, and D. H. Kim "Phisics-Based SPICE Model of a-InGaZnO Thin Film Transistor Using Verilog-A" The 18th Korean Conference on Semiconductors, 2011-02
  • 86 M.-K. Bae, Y. Jeon, S. Kim, Y. Kim, D. S. Kong, H. Jung, J. Lee, J. Jang, W. Kim, I. Hur, J. Kim, D. M. Kim, and D. H. Kim "Physical Parameter-Based Anaytical I-V Model of Amorphous Indium-Gallium-Zinc-Oxide thin-Film Transistors" The 18th Korean Conference on Semiconductors, 2011-02
  • 85 Y. Kim, S. Kim, Y. Jeon, M.-K. Bae, D. S. Kong, H. K. Jung, J. Lee, J. Jang, J. Kim, W. Kim, I. Hur, D. M. Kim, and D. H. Kim "Quantitative Analysis of Negative Bias Illumination Stress-Induced Instability Mechanisms in Amorphous InGaZnO Thin-Film Transistors" The 18th Korean Conference on Semiconductors, 2011-02